| 2019 | S. Prucnal, Y. Berencén, M. Wang, L. Rebohle, R. Kudrawiec, M. Polak, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Grenzer, M. Turek, A. Dro?dziel, K. Pyszniak, M. Helm, W. Skorupa, S. Zhou: Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing. In: Journal of Applied Physics, 2019, 203105-1-203105-7 |
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| 2019 | Mao Wang, A. Debernardi, Y. Berencén, R. Heller, Chi Xu, Ye Yuan, Yufang Xie, R. Böttger, L. Rebohle, W. Skorupa, M. Helm, S. Prucnal, and Shengqiang Zhou: Breaking the doping limit in silicon by deep impurities. In: Phys. Rev. Applied, 2019, 054039-054054 |
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| 2019 | Slawomir Prucnal, Yonder Berencén, Mao Wang, Yordan M. Georgiev, Artur Erbe, Muhammad B. Khan, Roman Boettger, René Hübner, Tommy Schönherr, Jana Kalbacova, Lasse Vines, Stefan Facsko, Martin Engler, Dietrich R. T. Zahn, Joachim Knoch, Manfred Helm, Wolfgang Skorupa, and Shengqiang Zhou: Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy. In: Journal of Applied Physics, 2019, 245703-1-245703-9 |
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| 2019 | Y. Berencén, Y. Xie, M. Wang, S. Prucnal, L. Rebohle,
S. Zhou: Structural and optical properties of pulsed-laser deposited crystalline ?-Ga2O3 thin films on silicon. In: Semiconductor Science and Technology, 2019, 035001-035007 |
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| 2019 | Mao Wang, R. Hübner, Chi Xu, Yufang Xie, Y. Berencén, R. Heller, L. Rebohle, M. Helm, S. Prucnal, and Shengqiang Zhou: Thermal stability of Te-hyperdoped Si: Atomic-scale correlation of the structural, electrical, and optical properties. In: PHYSICAL REVIEW MATERIALS, 2019, 044606-044615 |
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| 2018 | Yonder Berencén, Slawomir Prucnal, Wolfhard Möller, René Hübner, Lars Rebohle, Roman Böttger, Markus Glaser, Tommy Schönherr, Ye Yuan, Mao Wang, Yordan M. Georgiev, Artur Erbe, Alois Lugstein, Manfred Helm, Shengqiang Zhou, Wolfgang Skorupa: CMOS?compatible controlled hyperdoping of silicon nanowires. In: Advanced Materials Interfaces, 2018, 1800101-1800109 |
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| 2018 | Slawomir Prucnal, Yonder Berencén, Mao Wang, Lars Rebohle, Roman Boettger, Inga Anita Fischer, Lion Augel, M Oehme, Joerg Schulze, Matthias Voelskow, Manfred Helm, Wolfgang Skorupa, Shengqiang Zhou: Ex-situ n+ doping of GeSn alloys via non-equilibrium processing. In: Semiconductor Science and Technology, 2018, |
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| 2018 | Mao Wang, Y. Berencén, E. Garcia-Hemme, S. Prucnal, R. Hübner, Ye Yuan, Chi Xu, L. Rebohle, R. Böttger, R. Heller, H. Schneider, W. Skorupa, M. Helm, and Shengqiang Zhou: Extended infrared photoresponse in Te-hyperdoped Si at room temperature. In: Physical Review Applied, 2018, 024054-024063 |
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| 2018 | Y Berencén, S Prucnal, W Möller, R Hübner, L Rebohle, T Schönherr, M Bilal Khan, M Wang, M Glaser, Y M Georgiev, A Erbe, A Lugstein, M Helm and S Zhou: Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping. In: Nanotechnology, 2018, 474001-474008 |
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| 2018 | Chaoming Liu, Yonder Berencén, Jianqun Yang, Yidan Wei, Mao Wang, Ye Yuan, C Xu, Yufang Xie, Xingji Li and Shengqiang Zhou: Irradiation effects on the structural and optical properties of single crystal ?-Ga2O3. In: Semiconductor Science and Technology, 2018, 095022-095028 |
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| 2018 | Fang Liu, Mao Wang, Yonder Berencén, Slawomir Prucnal, Martin Engler, René Hübner, Ye Yuan, René Heller, Roman Böttger, Lars Rebohle, Wolfgang Skorupa, Manfred Helm and Shengqiang Zhou: On the insulator-to-metal transition in titanium-implanted silicon. In: Scientific Reports, 2018, 4164-4172 |
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| 2018 | Slawomir Prucnal, Yonder Berencén, Mao Wang, Jörg Grenzer, Matthias Voelskow, Rene Hübner, Yuji Yamamoto, Alexander Scheit, Florian Bärwolf, Vitaly Zviagin, Rüdiger Schmidt-Grund, Marius Grundmann, Jerzy ?uk, Marcin Turek, Andrzej Dro?dziel, Krzysztof Pyszniak, Robert Kudrawiec, Maciej P. Polak, Lars Rebohle, Wolfgang Skorupa, Manfred Helm, Shengqiang Zhou: Strain and band-gap engineering in Ge-Sn alloys via P doping. In: Physical Review Applied, 2018, 064055-064066 |
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| 2018 | F. Liu, S. Prucnal, Ye Yuan, R. Heller, Y. Berencén, R. Böttger, L. Rebohle, W. Skorupa, M. Helm, S. Zhou: Structural and electrical properties of Se-hyperdoped Si via ion implantation and flash lamp annealing. In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2018, 52-55 |
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| 2017 | S. Prucnal, Jiada Wu, Y. Berencén, M. O. Liedke, A. Wagner, F. Liu, M. Wang, L. Rebohle, S. Zhou, Hua Cai,
and W. Skorupa: Engineering of optical and electrical properties of ZnO by non-equilibrium thermal processing: The role of zinc interstitials and zinc vacancies. In: Journal of Applied Physics, 2017, 035303-03508 |
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| 2017 | Slawomir Prucnal, Jacopo Frigerio, Enrico Napolitani, Andrea Ballabio, Yonder Berencén, Lars Rebohle, Mao Wang, Roman Boettger, Matthias Voelskow, Giovanni Isella, René Hübner, Manfred Helm, Shengqiang Zhou and Wolfgang Skorupa: In-situ ohmic contact formation for n-type Ge via non-equilibrium processing. In: Semiconductor Science and Technology, 2017, 115006-115013 |
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| 2017 | Fang Liu, Slawomir Prucnal, Yonder Berencén, Zhi Tao Zhang, Ye Yuan, Yu Liu, René Heller, Roman Boettger, Lars Rebohle, Wolfgang Skorupa, Manfred Helm and Shengqiang Zhou: Realizing the insulator-to-metal transition in Se-hyperdoped Si via non-equilibrium material processing. In: Journal of Physics D: Applied Physics, 2017, 415102-415107 |
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| 2017 | Yonder Berencén, Slawomir Prucnal, Fang Liu, Ilona Skorupa, René Hübner, Lars Rebohle, Shengqiang Zhou, Harald Schneider, Manfred Helm, and W. Skorupa: Room-temperature short-wavelength infrared Si photodetector. In: Scientific Reports, 2017, 43688-43697 |
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| 2016 | Y. Berencén, B. Mundet, J. A. Rodríguez, J. Montserrat, C. Domínguez, B. Garrido: Hot electron engineering for boosting electroluminescence efficiencies of silicon-rich nitride light emitting devices. In: Journal of Luminescence, 2016, 26-31 |
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